TECH PUBLIC · FETs & Power MOSFETs · MPN TPM3415ES3-1
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| Gate Charge(Qg) | 10.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 114.8pF |
| RDS(on) | 36mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1811nF |
20V 4A 1.4W Surface Mount SOT-23