TECH PUBLIC TPM2008EP3-A

TECH PUBLIC · FETs & Power MOSFETs · MPN TPM2008EP3-A

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)700mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation100mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)370mΩ@25V
Number1 N-channel
Input Capacitance(Ciss)120pF
TypeN-Channel

Technical details

N-Channel 20V 0.7A 100mW Surface Mount DFN1006-3L

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