TECH PUBLIC · FETs & Power MOSFETs · MPN TPM2008EP3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 700mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 100mW |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 130mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 120pF |
| Type | N-Channel |
N-Channel 20V 700mA 100mW Surface Mount DFN1006-3L