TECH PUBLIC · FETs & Power MOSFETs · MPN TPM2006NHK3
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 5.1nC@10V |
| Output Capacitance(Coss) | 46.9pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 38.4W |
| RDS(on) | 650mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 182pF |
200V 6A 38.4W Surface Mount TO-252