TECH PUBLIC · FETs & Power MOSFETs · MPN TPM1019ND6
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| Gate Charge(Qg) | 19.3nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 15.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 800mW |
| RDS(on) | 9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 202pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.439nF |
20V 15.2A 0.8W Surface Mount DFN2X2-6L