TECH PUBLIC · FETs & Power MOSFETs · MPN TPM1012R3
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| Gate Charge(Qg) | 750pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 600mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 175mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 410mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
20V 600mA 900mV 175mW 410mΩ@4.5V 1 N-channel SOT-523-3 Single FETs, MOSFETs RoHS