TECH PUBLIC · FETs & Power MOSFETs · MPN TPM1004NY3-1
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| Gate Charge(Qg) | 9.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6.5A |
| Output Capacitance(Coss) | 480pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 9W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.48nF |
100V 6.5A 1.6V 9W 80mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS