TECH PUBLIC · FETs & Power MOSFETs · MPN TPDMTH10H4M6SPS
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| Output Capacitance(Coss) | 2.3nF |
|---|---|
| Pd - Power Dissipation | 180W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 65nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
180W 100V 3V 3.6mΩ@10V 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS