TECH PUBLIC TPAOD2N100

TECH PUBLIC · FETs & Power MOSFETs · MPN TPAOD2N100

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Specifications

Gate Charge(Qg)23.5nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)634pF
TypeN-Channel

Technical details

N-Channel 1kV 2A 83W Surface Mount TO-252

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