TECH PUBLIC · FETs & Power MOSFETs · MPN STB100N10F7-TP
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.9nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.1nF |
100V 160A 180W Surface Mount TO-263