TECH PUBLIC · FETs & Power MOSFETs · MPN SI3590DV
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| Gate Charge(Qg) | 5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 35pF;47pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 45mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 199pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 3A 1.2W Surface Mount SOT-23-6