TECH PUBLIC SI3460DV

TECH PUBLIC · FETs & Power MOSFETs · MPN SI3460DV

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)35mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.31nF
TypeN-Channel

Technical details

N-Channel 20V 7A 2W Surface Mount SOD-323

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