TECH PUBLIC SI2335DS-TP

TECH PUBLIC · FETs & Power MOSFETs · MPN SI2335DS-TP

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Specifications

Gate Charge(Qg)4.5nC@4V
Drain to Source Voltage12V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
RDS(on)45mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)190pF
Number1 P-Channel
Input Capacitance(Ciss)740pF
TypeP-Channel

Technical details

P-Channel 12V 4.1A 0.35W Surface Mount SOT-23

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