TECH PUBLIC SI2329DS

TECH PUBLIC · FETs & Power MOSFETs · MPN SI2329DS

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)19.5nC
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.8W
RDS(on)28mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)210pF
Number1 P-Channel
Input Capacitance(Ciss)1.73nF

Technical details

20V 6A 1.8W Surface Mount SOT-23-3L

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