TECH PUBLIC SI2319DS

TECH PUBLIC · FETs & Power MOSFETs · MPN SI2319DS

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)110mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)505pF

Technical details

40V 3A 1.25W Surface Mount SOT-23

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