TECH PUBLIC SI2309DS

TECH PUBLIC · FETs & Power MOSFETs · MPN SI2309DS

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.3nC@30V
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)17.9pF
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)444.2pF

Technical details

60V 1.6A 1.5W Surface Mount SOT-23

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