TECH PUBLIC SI2309BDS

TECH PUBLIC · FETs & Power MOSFETs · MPN SI2309BDS

No reviews yet — be the first to review TECH PUBLIC SI2309BDS.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.3nC@10V
Output Capacitance(Coss)19.6pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation1.5W
RDS(on)240mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)17.9pF
Number1 P-Channel
Input Capacitance(Ciss)444.2pF
TypeP-Channel

Technical details

P-Channel 60V 1.6A 1.5W Surface Mount SOT-23

Related FETs & Power MOSFETs