TECH PUBLIC SI2306BDS

TECH PUBLIC · FETs & Power MOSFETs · MPN SI2306BDS

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@15V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)95mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)235pF

Technical details

30V 3A 0.9W Surface Mount SOT-23

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