TECH PUBLIC SI1029X

TECH PUBLIC · FETs & Power MOSFETs · MPN SI1029X

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)950pC@4.5V;1.1nC@4.5V
Output Capacitance(Coss)11pF;15pF
Current - Continuous Drain(Id)360mA;200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)6.6pF;2.2pF
RDS(on)1.5Ω@10V;2.5Ω@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)36pF;51pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 360mA 200mA 300mW Surface Mount SOT-563

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