TECH PUBLIC SI1022R-TP

TECH PUBLIC · FETs & Power MOSFETs · MPN SI1022R-TP

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)1.7nC@4.5V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)27pF

Technical details

60V 300mA 1.6V 350mW 1.8Ω@10V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

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