TECH PUBLIC PBSS4160DS(TP)

TECH PUBLIC · Transistors (BJTs) · MPN PBSS4160DS(TP)

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation500mW
typeNPN
Number2 NPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))250mV;500mV

Technical details

60V 300 NPN 2 NPN 1A SOT-23-6 Single Bipolar Transistors RoHS

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