TECH PUBLIC FDS8958B

TECH PUBLIC · FETs & Power MOSFETs · MPN FDS8958B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.8nC@15V
Output Capacitance(Coss)59pF;120pF
Current - Continuous Drain(Id)7A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.53V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)22mΩ@10V;30mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)846pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 7A 6A 1.7W Surface Mount SOIC-8

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