TECH PUBLIC · FETs & Power MOSFETs · MPN FDG6308P-P
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 500pC@4.5V |
| Output Capacitance(Coss) | 6pF |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 280mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF |
| RDS(on) | 1.05Ω@1.8V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 55pF |
N-Channel Array 20V 1.1A 280mW Surface Mount SOT-363