TECH PUBLIC FDG311N-TP

TECH PUBLIC · FETs & Power MOSFETs · MPN FDG311N-TP

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4nC@4.5V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation420mW
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)65mΩ@4.5V;80mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)300pF

Technical details

20V 2.6A 420mW Surface Mount SOT-363

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