TECH PUBLIC · FETs & Power MOSFETs · MPN FDC658AP
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| Drain to Source Voltage | 30V |
|---|---|
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 350mW |
| RDS(on) | 60mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 700pF |
30V 4.1A 350mW Surface Mount SOT-23-6