TECH PUBLIC · FETs & Power MOSFETs · MPN FDC6561AN
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| Gate Charge(Qg) | 4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 35pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 35mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 170pF |
30V 4A 1.5V 1.2W 35mΩ@10V 2 N-Channel SOT-23-6 Single FETs, MOSFETs RoHS