TECH PUBLIC · FETs & Power MOSFETs · MPN FDC6401N
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 7nC@4.5V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 45mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 513pF |
N-Channel Array 20V 4A 1.25W Surface Mount SOT-163