TECH PUBLIC · FETs & Power MOSFETs · MPN FDC6308P
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| Gate Charge(Qg) | 6nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 85mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 300pF |
20V 3A 1V 1.1W 85mΩ@4.5V 2 P-Channel SOT-23-6 Single FETs, MOSFETs RoHS