TECH PUBLIC FDC5614P

TECH PUBLIC · FETs & Power MOSFETs · MPN FDC5614P

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Specifications

Gate Charge(Qg)17.7nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.92W
RDS(on)140mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number1 P-Channel
Input Capacitance(Ciss)637pF
TypeP-Channel

Technical details

P-Channel 60V 3A 1.92W Surface Mount SOT-23-6

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