TECH PUBLIC DMG1029SV

TECH PUBLIC · FETs & Power MOSFETs · MPN DMG1029SV

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)1.1nC@10V
Output Capacitance(Coss)11pF;15pF
Current - Continuous Drain(Id)360mA;200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)3Ω@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)51pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 360mA 200mA 300mW Surface Mount SOT-563

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