TECH PUBLIC BSS606N-P

TECH PUBLIC · FETs & Power MOSFETs · MPN BSS606N-P

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)6nC@4.5V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation1.7W
RDS(on)120mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)19.5pF
Number1 N-channel
Input Capacitance(Ciss)247pF
TypeN-Channel

Technical details

N-Channel 60V 3.5A 1.7W Surface Mount SOT-89-3

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