TDSEMIC SI2302-TD

TDSEMIC · FETs & Power MOSFETs · MPN SI2302-TD

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Specifications

Gate Charge(Qg)2.9nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))700mV
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)75mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)140pF
TypeN-Channel

Technical details

20V 3A 700mV 75mΩ@2.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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