TDSEMIC · Transistors (BJTs) · MPN MMBTH10 3EM-TD(0.29)
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| Current - Collector Cutoff | 10nA |
|---|---|
| Transition frequency(fT) | 6GHz |
| Collector - Emitter Voltage VCEO | 20V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 200mW |
| type | NPN |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 400mV |
20V 60 NPN 50mA SOT-23 Single Bipolar Transistors RoHS