TDSEMIC · Transistors (BJTs) · MPN MMBT5551 G1-TD(0.42)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 160V |
| DC Current Gain | 80 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 625mW |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+150℃ |
160V 80 NPN 600mA SOT-23 Single Bipolar Transistors RoHS