TDSEMIC MMBT5401 2L

TDSEMIC · Transistors (BJTs) · MPN MMBT5401 2L

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 160V 0.6A 300MHz 0.3W Surface Mount SOT-23

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