TDSEMIC MMBT2222 1P

TDSEMIC · Transistors (BJTs) · MPN MMBT2222 1P

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 40V 0.6A 150MHz 0.25W Surface Mount SOT-23

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