TDSEMIC C1815-TD

TDSEMIC · Transistors (BJTs) · MPN C1815-TD

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation400mW
typeNPN
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

50V 70 NPN 150mA SOT-23-3 Single Bipolar Transistors RoHS

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