TDSEMIC BSS138-TD

TDSEMIC · FETs & Power MOSFETs · MPN BSS138-TD

No reviews yet — be the first to review TDSEMIC BSS138-TD.

Specifications

Output Capacitance(Coss)3.4pF
Pd - Power Dissipation350mW
Configuration-
Gate Charge(Qg)1.6nC
Drain to Source Voltage50V
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Reverse Transfer Capacitance (Crss@Vds)2.3pF
RDS(on)5.6Ω@2.75V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

350mW 50V 200mA 1.1V 5.6Ω@2.75V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs