TDSEMIC 50N06-TD

TDSEMIC · FETs & Power MOSFETs · MPN 50N06-TD

No reviews yet — be the first to review TDSEMIC 50N06-TD.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)19.3nC@4.5V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)10mΩ@10V;12mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.423nF
TypeN-Channel

Technical details

N-Channel 60V 50A 45W Surface Mount TO-252

Related FETs & Power MOSFETs