TDSEMIC 2N7002K-TD

TDSEMIC · FETs & Power MOSFETs · MPN 2N7002K-TD

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Specifications

Output Capacitance(Coss)11pF
Pd - Power Dissipation350mW
Gate Charge(Qg)1.7nC
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)380mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)2.5Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)28pF

Technical details

350mW 60V 380mA 1.6V 2.5Ω@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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