TDSEMIC · FETs & Power MOSFETs · MPN 2309-TD
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| Output Capacitance(Coss) | 30pF |
|---|---|
| Pd - Power Dissipation | 12W |
| Configuration | - |
| Gate Charge(Qg) | 4.92nC |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 450mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 716pF |
12W 60V 1.6A 1.5V 450mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS