TDSEMIC 2309-TD

TDSEMIC · FETs & Power MOSFETs · MPN 2309-TD

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Specifications

Output Capacitance(Coss)30pF
Pd - Power Dissipation12W
Configuration-
Gate Charge(Qg)4.92nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.6A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)450mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)716pF

Technical details

12W 60V 1.6A 1.5V 450mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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