TDSEMIC · FETs & Power MOSFETs · MPN 2302S A2SHB-TD(160K)
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| Output Capacitance(Coss) | 75pF |
|---|---|
| Pd - Power Dissipation | 350mW |
| Configuration | - |
| Gate Charge(Qg) | 3.3nC |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.1A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 115mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 405pF |
350mW 20V 2.1A 1.1V 115mΩ@2.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS