TDSEMIC · FETs & Power MOSFETs · MPN 2301S A1SHB-TD(160K)
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| Output Capacitance(Coss) | 75pF |
|---|---|
| Pd - Power Dissipation | 350mW |
| Configuration | - |
| Gate Charge(Qg) | 5.5nC |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 142mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 405pF |
350mW 20V 2.3A 1V 142mΩ@2.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS