TDSEMIC 2301 A1SHB-TD(80K)

TDSEMIC · FETs & Power MOSFETs · MPN 2301 A1SHB-TD(80K)

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Specifications

Output Capacitance(Coss)92pF
Pd - Power Dissipation1.25W
Configuration-
Gate Charge(Qg)5.5nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.1A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)142mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)589pF

Technical details

1.25W 20V 3.1A 1V 142mΩ@2.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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