TDSEMIC 20N03-TD

TDSEMIC · FETs & Power MOSFETs · MPN 20N03-TD

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Specifications

Gate Charge(Qg)4.9nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation20.8W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)416pF
TypeN-Channel

Technical details

N-Channel 30V 20A 20.8W Surface Mount TO-252-2L

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