TDSEMIC 15N10-TD

TDSEMIC · FETs & Power MOSFETs · MPN 15N10-TD

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Specifications

Gate Charge(Qg)26.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)15A
Output Capacitance(Coss)38.73pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
RDS(on)85mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)6.32pF
Number1 N-channel
Input Capacitance(Ciss)827.61pF
TypeN-Channel

Technical details

N-Channel 100V 15A 34.7W Surface Mount TO-252-2L

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