Tak Cheong DTC123JE

Tak Cheong · Transistors (BJTs) · MPN DTC123JE

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))300mV
Operating Temperature-50℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Resistor Ratio2.2
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)-

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523

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