Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM680P06DPQ56
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| Current - Continuous Drain(Id) | 12A |
|---|---|
| RDS(on) | 110mΩ@4.5V |
| Pd - Power Dissipation | 3.5W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Gate Charge(Qg) | 16.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
12A 110mΩ@4.5V 3.5W 2.5V PDFN-8(5x6) FET, MOSFET Arrays RoHS