Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM6502CR RLG
No reviews yet — be the first to review Taiwan Semiconductor TSM6502CR RLG.
| Current - Continuous Drain(Id) | 24A |
|---|---|
| Pd - Power Dissipation | 40W |
| RDS(on) | 110mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.159nF;930pF |
| Gate Charge(Qg) | 10.3nC@4.5V;9.5nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
24A 40W 110mΩ@4.5V 2.5V 1 N-Channel + 1 P-Channel PDFN-8(5x6) FET, MOSFET Arrays RoHS