Taiwan Semiconductor TSM5055DCR RLG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM5055DCR RLG

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)-
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2.5V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)276pF
Input Capacitance(Ciss)2.55nF
Gate Charge(Qg)49nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)388pF

Technical details

20A 2.5V PDFN-8(5x6) FET, MOSFET Arrays RoHS

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